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 1SS355
Diodes
Switching diode
1SS355
Applications High speed switching External dimensions (Units : mm)
2.50.2
1.70.1
Features 1) Small surface mounting type.(UMD2) 2) High Speed.(trr=1.2ns Typ.) 3) High reliability with high surge current handling capability.
CATHODE MARK
A
+0.1 -0.05
Construction Silicon epitaxial planar
1.250.1
0.1 0.30.05
+0.2 0.7 -0.1
ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323
Absolute maximum ratings (Ta=25C)
Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 90 80 225 100 500 125 -55~+125 Unit V V mA mA mA C C
Electrical characteristics (Ta=25C)
Parameter
Forward voltage Reverse current Capacitance between terminals Reverse recovery time
Symbol VF IR CT trr
Min. - - - -
Typ. - - - -
Max. 1.2 0.1 3.0 4
Unit V A pF ns IF=100mA VR=80V
Conditons
VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=100
1SS355
Diodes
Electrical characteristic curves (Ta=25C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1
1m 0.1m 10 1 100n Ta=25C 10n 1n 0 Ta=125C
10 5
FORWARD CURRENT : IF (A)
100m
10m
Ta=125C 75C 25C -25C
REVERSE CURRENT : IR (A)
2 1 0.5
Ta=75C
1m
100
0.2 0.1 0
10 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
20
40
60
80
100
120
2
4
6
8
10
12
14
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between terminals characteristics
3
REVERSE RECOVERY TIME : trr (ns)
100
SURGE CURRENT : Isurge (A)
VR=6V Irr=1/10IR
50
PULSE Single pulse
2
20 10 5
1
2 1 0.1
0 0
10
20
30
1
10
100
1000
10000
FORWARD CURRENT : IF (mA)
PULSE WIDTH : TW (ms)
Fig.4 Reverse recovery time characteristics
Fig.5 Surge current characteristics
0.01F
D.U.T.
5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit


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